HM3N150A - silicon N-channel Enhanced VDMOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3N150A
Manufacturer	H&M Semiconductor
File Size	367.33 KB
Description	silicon N-channel Enhanced VDMOSFET
Datasheet	HM3N150A Datasheet
Additional preview pages of the HM3N150A datasheet.

Product details

Description

HM3N150A the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-3P(H), which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤8.0Ω).
Low Gate Charge (Typical Data: 9.3nC).
Low Reverse transfer capacitances(Typical:2.4 pF).
100% Single Pulse avalanche energy Test.

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Published: Jul 14, 2025 |