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HM3N80F Datasheet - H&M Semiconductor

HM3N80F Silicon N-Channel Power MOSFET

VDSS 800 HM3N80F, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy. The transistor can be used in various power .

HM3N80F Features

* l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

HM3N80F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3N80F

Manufacturer:

H&M Semiconductor

File Size:

1.09 MB

Description:

Silicon n-channel power mosfet.

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HM3N80F HM3N80F Silicon N-Channel Power MOSFET H&M Semiconductor

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