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HM4953A - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4953A.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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HM4953A Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.