HMS20N15KA Datasheet - H&M Semiconductor

HMS20N15KA N-Channel Super Trench Power MOSFET

The HMS20N15KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

HMS20N15KA Features

* VDS =150V,ID =20A RDS(ON)=56mΩ (typical) @ VGS=10V RDS(ON)=68mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* LED backlighting

HMS20N15KA-HMSemiconductor.pdf

HMS20N15KA Datasheet Preview — Preview of HMS20N15KA PDF

Datasheet Details

Part number:

HMS20N15KA

Manufacturer:

H&M Semiconductor

File Size:

419.83 KB

Description:

N-channel super trench power mosfet.

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HMS20N15KA HMS20N15KA N-Channel Super Trench Power MOSFET H&M Semiconductor

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