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HMS20N25K, HMS20N25 - N-Channel Super Trench II Power MOSFET

HMS20N25K Description

HMS20N25, HMS20N25K N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

HMS20N25K Features

* VDS =250V,ID =80A RDS(ON)=89mΩ , typical (TO-220)@ VGS=10V RDS(ON)=89mΩ , typical (TO-252)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMS20N25K, HMS20N25. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMS20N25K, HMS20N25
Manufacturer
H&M Semiconductor
File Size
1.04 MB
Datasheet
HMS20N25-HMSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET
Note
This datasheet PDF includes multiple part numbers: HMS20N25K, HMS20N25.
Please refer to the document for exact specifications by model.

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N-Channel Super Trench Power MOSFET H&M Semiconductor
H&M Semiconductor HMS20N25K-like datasheet

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