HM50N06K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabi.
GENERAL FEATURES
* VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
* High density cell design for ultra low Rdson
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