A1SHB Key Features
- VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- Part: A1SHB
- Description: P-Channel Trench Power MOSFET
- Manufacturer: H&M Semiconductor
- Size: 803.79 KB
Other A1SHB Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
YANGJING |
A1SHB | P-Channel MOSFET |
Bruckewell Technology |
A1SHB | P-Channel Enhancement Mode Power MOSFET |
Vanguard Semiconductor |
A1SHB | P-Channel Advanced Power MOSFET |
Kexin Semiconductor |
A1SHB | P-Channel MOSFET |