| Part number | HM1N6035 |
|---|---|
| Datasheet | HM1N6035-HMSemiconductor.pdf |
| File Size | 1.22 MB |
| Manufacturer | H&M Semiconductor |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS...
See all H&M Semiconductor datasheets
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