HM1N6035 Datasheet | H&M Semiconductor

Silicon N-Channel Power MOSFET HM1N6035 General Description： VDSS HM1N60PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS standard. Features ： z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy...