SFX33N10 Datasheet | HI-SEMICON

33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology TO-251J-3L 1 3 1.Gate 2.Darin 3.Source TO-251D-3L TO-252-2L Features - 33A,100V,RDS(on)（typ）=34m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability TO-220-3L TO-220F-3L ORDERING INFORMATION Part No. Package SFP33N10 SFF33N10 SFD33N10TR SFD33N10 TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SFP33N10 SFF33N10 SFD33N10 SFD33N10 Material Pb free Pb free Pb free Pb...