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HY5N60 Datasheet 600v N-channel MOSFET

Manufacturer: HOOYI

Overview: 600V N-Channel MOSFET.

Datasheet Details

Part number HY5N60
Manufacturer HOOYI
File Size 3.18 MB
Description 600V N-Channel MOSFET
Datasheet HY5N60-HOOYI.pdf

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Excellent Gate Charge: 14nC(Typ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2 Ω(Typ. ) @VGS =10V ‰ 100% Avalanche Tested HY5N60 BVDSS = 640 RDS(on) = 2 Ω ID = 5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dr.

HY5N60 Distributor

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