Part number:
HY5N60
Manufacturer:
HOOYI
File Size:
3.18 MB
Description:
600v n-channel mosfet.
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : 2 Ω(Typ.) @VGS =10V 100% Avalanche Tested HY5N
HY5N60
HOOYI
3.18 MB
600v n-channel mosfet.
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