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ATF-25570 - 0.5-10 GHz General Purpose Gallium Arsenide FET

The ATF-25570 by HP is a 0.5-10 GHz General Purpose Gallium Arsenide FET. Below is the official datasheet preview.

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Official preview page of the ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET datasheet (HP).

Datasheet Details

Part number ATF-25570
Manufacturer HP
File Size 34.79 KB
Description 0.5-10 GHz General Purpose Gallium Arsenide FET
Datasheet download datasheet ATF-25570-HP.pdf
Additional preview pages of the ATF-25570 datasheet.

ATF-25570 Product details

Description

The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package.This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.Total gate periphery is 500 microns.Proven gold based metallization systems and nitride passivation assure a rugged

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