ATF-26836 fet equivalent, 2-16 ghz general purpose gallium arsenide fet.
* High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz
* High Gain: 9.0 dB Typical GSS at 12␣ GHz
* Cost Effective Ceramic Microstrip Package
* Tape-and-.
and general purpose amplifier applications in the 2-16␣ GHz frequency range.
36 micro-X Package
This GaAs FET device h.
The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in .
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