ATF-45171 Description
The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 2.5 millimeters.
ATF-45171 Key Features
- High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz
- High Gain at 1dB pression: 10.5 dB Typical G1 dB at 4␣ GHz
- High Power Efficiency: 38% Typical at 4␣ GHz
- Hermetic Metal-Ceramic Stripline Package