ATF-44101 Description
The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters.
ATF-44101 Key Features
- High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz
- High Gain at 1 dB pression: 8.5␣ dB Typical G 1dB at 4␣ GHz
- High Power Efficiency: 35% Typical at 4␣ GHz
- Hermetic Metal-Ceramic Stripline Package