ATF-44101 fet equivalent, 2-8 ghz medium power gallium arsenide fet.
* High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz
* High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz
* High Power Efficiency: 35% Typical.
in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliab.
The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency
range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell struct.
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