ATF-46171 Description
The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25␣ millimeters.
ATF-46171 Key Features
- High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz
- High Gain at 1 dB pression: 11.0␣ dB Typical G 1dB at 4␣ GHz
- High Power Efficiency: 38% Typical at 4␣ GHz
- Hermetic Metal-Ceramic Stripline Package