ATF-44101 - 2-8 GHz Medium Power Gallium Arsenide FET

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ATF-44101 2-8 GHz Medium Power Gallium Arsenide FET by HP - Datasheet Preview — Datasheet preview – ATF-44101

Datasheet Details

Part number	ATF-44101
Manufacturer	HP
File Size	60.06 KB
Description	2-8 GHz Medium Power Gallium Arsenide FET
Datasheet	ATF-44101 Datasheet
Additional preview pages of the ATF-44101 datasheet.

Product details

Description

The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range.This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers.Total gate periphery is 5 millimeters.Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.100 mil Flange This device is suitable for applicatio

Features

High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz.
High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz.
High Power Efficiency: 35% Typical at 4␣ GHz.
Hermetic Metal-Ceramic Stripline Package.

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Published: Nov 8, 2017 |