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2 – 8 GHz Medium Power Gallium Arsenide FET
Technical Data
ATF-44101
Features
• High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz
• High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz
• High Power Efficiency: 35% Typical at 4␣ GHz
• Hermetic Metal-Ceramic Stripline Package
Description
The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency
range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
ATF-44101 Datasheet
