ATF-44101 Datasheet | HP

Features - High Output Power: 32.0␣ d Bm Typical P 1d B at 4␣ ␣ GHz - High Gain at 1 d B pression: 8.5␣ d B Typical G 1d B at 4␣ GHz - High Power Efficiency: 35% Typical at 4␣ GHz - Hermetic Metal-Ceramic Stripline Package Description The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate length Ga As FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 100 mil Flange This device is suitable for applications in space, airborne, military ground and shipboard, and mercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and...