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ATF-45171 Datasheet 2-8 Ghz Medium Power Gallium Arsenide Fet

Manufacturer: HP

Overview: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171.

Datasheet Details

Part number ATF-45171
Manufacturer HP
File Size 38.86 KB
Description 2-8 GHz Medium Power Gallium Arsenide FET
Datasheet ATF-45171-HP.pdf

General Description

The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range.

This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.

Total gate periphery is 2.5 millimeters.

Key Features

  • High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz.
  • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz.
  • High Power Efficiency: 38% Typical at 4␣ GHz.
  • Hermetic Metal-Ceramic Stripline Package.

More Datasheets from HP

Part Number Description
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ATF-45171 Distributor