ATF-45171 Datasheet | HP

Features - High Output Power: 29.0␣ d Bm Typical P 1d B at 4␣ GHz - High Gain at 1d B pression: 10.5 d B Typical G1 d B at 4␣ GHz - High Power Efficiency: 38% Typical at 4␣ GHz - Hermetic Metal-Ceramic Stripline Package Description The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally 0.5 micron gate length Ga As FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and shipboard, and mercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal...