ATF-46101 Datasheet | HP

Features - High Output Power: 27.0␣ d Bm Typical P 1d B at 4␣ GHz - High Gain at 1 d B pression: 12.0␣ d B Typical G 1d B at 4␣ GHz - High Power Efficiency: 38% Typical at 4␣ GHz Description The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5␣ micron gate length Ga As FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25␣ millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and shipboard, and mercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance. 100 mil Flange...