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ATF-46101 - 2-10 GHz Medium Power Gallium Arsenide FET

Description

The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range.

Features

  • High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz.
  • High Gain at 1 dB Compression: 12.0␣ dB Typical G 1dB at 4␣ GHz.
  • High Power Efficiency: 38% Typical at 4␣ GHz.

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Datasheet Details

Part number ATF-46101
Manufacturer HP
File Size 39.89 KB
Description 2-10 GHz Medium Power Gallium Arsenide FET
Datasheet download datasheet ATF-46101 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz • High Gain at 1 dB Compression: 12.0␣ dB Typical G 1dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz Description The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25␣ millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
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