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ATF-46171 Datasheet 2-10 Ghz Medium Power Gallium Arsenide Fet

Manufacturer: HP

Overview: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46171.

Datasheet Details

Part number ATF-46171
Manufacturer HP
File Size 39.00 KB
Description 2-10 GHz Medium Power Gallium Arsenide FET
Datasheet ATF-46171-HP.pdf

General Description

The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range.

This nominally 0.5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.

Total gate periphery is 1.25␣ millimeters.

Key Features

  • High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz.
  • High Gain at 1 dB Compression: 11.0␣ dB Typical G 1dB at 4␣ GHz.
  • High Power Efficiency: 38% Typical at 4␣ GHz.
  • Hermetic Metal-Ceramic Stripline Package.

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ATF-46171 Distributor