900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






HSMC

8205A Datasheet Preview

8205A Datasheet

Dual N-Channel Enhancement-Mode MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200701
Issued Date : 2007.03.01
Revised Date : 2007.03.12
Page No. : 1/4
8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
RDS(on)=38m@VGS=2.5V, ID=5.2A; RDS(on)=25m@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
8-Lead Plastic TSSOP-8L
8205A Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Applications
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
8205A
HSMC Product Specification




HSMC

8205A Datasheet Preview

8205A Datasheet

Dual N-Channel Enhancement-Mode MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-off Delay Time
tf Turn-off Fall Time
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=250uA
VGS=2.5V, ID=5.2A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=20V, VGS=0V
VGS=±12V, VDS=0V
VDS=10V, ID=6A
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200701
Issued Date : 2007.03.01
Revised Date : 2007.03.12
Page No. : 2/4
Min. Typ. Max. Unit
20 - - V
- 33 38
m
- 20 25
0.6 - 1.5 V
- - 1 uA
- - ±100 nA
7 13 -
S
- 4.86 -
- 0.92 -
- 1.4 -
- 562 -
- 106 -
- 75 -
- 8.1 -
- 9.95 -
- 21.85 -
- 5.35 -
nC
pF
ns
- - 1.7 A
- - 1.2 V
VGEN
Switching
Test Circuit
VDD
RD
VIN D
VOUT
RG
G
S
td(on)
ton Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
8205A
HSMC Product Specification


Part Number 8205A
Description Dual N-Channel Enhancement-Mode MOSFET
Maker HSMC
PDF Download

8205A Datasheet PDF






Similar Datasheet

1 8205 LOW-DROPOUT REGULATORS
Allegro MicroSystems
2 8205A Dual N-Channel MOSFET
RZC Microelectronics
3 8205A Dual N-Channel Enhancement-Mode MOSFET
HSMC
4 8205A N-channel enhancement mode power MOSFET
ETC
5 8205A Dual N-Channel Enhancement Mode MOSFET
HOTTECH
6 8205B N-channel enhancement mode power MOSFET
ETC
7 8205C N-channel enhancement mode power MOSFET
ETC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy