Datasheet Details
| Part number | HFP17N10 |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 1.15 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 HFP17N10 Datasheet
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| Part number | HFP17N10 |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 1.15 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
HFP17N10 Datasheet
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These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Shantou Huashan Electronic Devices Co.,Ltd.
HFP17N10 N-Channel Enhancement Mode Field Effect Transistor █.
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