HFP17N10 Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode . These devices are well suited for low voltage applications such as audio amplifier, high efficiency...
HFP17N10 Key Features
- 17A, 100V, RDS(on) <70mΩ@VGS = 10 V
- High density cell design for ultra low Rdson
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Maximum Ratings（Ta=25℃ unless otherwise specified）