Datasheet Details
| Part number | HYG023N03LR1C2 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 760.43 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 HYG023N03LR1C2 Datasheet
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| Part number | HYG023N03LR1C2 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 760.43 KB |
| Description | N-Channel MOSFET |
| Datasheet |
HYG023N03LR1C2 Datasheet
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30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DC Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G023N03 XYMXXXXXX Package Code C2: PPAK5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature.
| Part Number | Description |
|---|---|
| HYG023N03LR1D | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1U | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1V | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1D | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1P | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1B | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1P | N-Channel Enhancement Mode MOSFET |