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HYG037N03LQ1V - N-Channel MOSFET

This page provides the datasheet information for the HYG037N03LQ1V, a member of the HYG037N03LQ1D N-Channel MOSFET family.

Description

GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G037N03 XYMXXXXXX U G037N03 XYMXXXXXX V G037N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L

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Datasheet Details

Part number HYG037N03LQ1V
Manufacturer HUAYI
File Size 0.98 MB
Description N-Channel MOSFET
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Full PDF Text Transcription

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HYG037N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/85A RDS(ON)= 3.5mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G037N03 XYMXXXXXX U G037N03 XYMXXXXXX V G037N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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