• Part: HYG037N10LS2C2
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 571.64 KB
Download HYG037N10LS2C2 Datasheet PDF
HUAYI
HYG037N10LS2C2
HYG037N10LS2C2 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 100V/105A RDS(ON)=3.0 mΩ(typ.)@VGS = 10V RDS(ON)=4.1 mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free Devices Available (Ro HS pliant) Applications - Switching application - Battery Protection N-Channel Enhancement Mode MOSFET Pin Description DDDD DDDD SSSG Pin1 PDFN5- 6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G037N10 XYMXXXXXX Package Code C2 : PDFN5- 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature Range Source Current-Continuous(Body Diode)...