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HYG037N10LS2C2 - N-Channel Enhancement Mode MOSFET

General Description

DDDD DDDD SSSG Pin1 PDFN5 6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G037N10 XYMXXXXXX Package Code C2 : PDFN5 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;whi

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Datasheet Details

Part number HYG037N10LS2C2
Manufacturer HUAYI
File Size 571.64 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG037N10LS2C2 Datasheet

Full PDF Text Transcription (Reference)

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HYG037N10LS2C2 Feature  100V/105A RDS(ON)=3.0 mΩ(typ.)@VGS = 10V RDS(ON)=4.1 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Battery Protection N-Channel Enhancement Mode MOSFET Pin Description DDDD DDDD SSSG Pin1 PDFN5*6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G037N10 XYMXXXXXX Package Code C2 : PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.