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HYG037N10LS2C2 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG037N10LS2C2 Feature  100V/105A RDS(ON)=3.0 mΩ(typ.)@VGS = 10V RDS(ON)=4.1 mΩ(typ.)@VGS = 4.

Datasheet Details

Part number HYG037N10LS2C2
Manufacturer HUAYI
File Size 571.64 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG037N10LS2C2-HUAYI.pdf

General Description

DDDD DDDD SSSG Pin1 PDFN5*6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G037N10 XYMXXXXXX Package Code C2 : PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG037N10LS2C2 Distributor