HYG037N10LS2C2
HYG037N10LS2C2 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature
- 100V/105A RDS(ON)=3.0 mΩ(typ.)@VGS = 10V RDS(ON)=4.1 mΩ(typ.)@VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free Devices Available
(Ro HS pliant)
Applications
- Switching application
- Battery Protection
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
DDDD
SSSG Pin1
PDFN5- 6-8L
GS S S
N-Channel MOSFET
Ordering and Marking Information
C2
G037N10
XYMXXXXXX
Package Code C2 : PDFN5- 6-8L
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
.hymexa. 1
V1.0
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Junction Temperature Range
TSTG
Storage Temperature Range
Source Current-Continuous(Body Diode)...