• Part: HYG037N03LQ1V
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 0.98 MB
Download HYG037N03LQ1V Datasheet PDF
HUAYI
HYG037N03LQ1V
HYG037N03LQ1V is N-Channel MOSFET manufactured by HUAYI.
- Part of the HYG037N03LQ1D comparator family.
Feature - 30V/85A RDS(ON)= 3.5mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen free and Green Devices Available (Ro HS pliant) Pin Description GDS TO-252-2L TO-251-3L TO-251-3S Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information N-Channel MOSFET G037N03 XYMXXXXXX G037N03 XYMXXXXXX G037N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.2 HYG037N03LQ1D/U/V Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source...