Datasheet Details
| Part number | HYG037N03LQ1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 0.98 MB |
| Description | N-Channel MOSFET |
| Datasheet | HYG037N03LQ1D-HOOYI.pdf |
|
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Overview: HYG037N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature 30V/85A RDS(ON)= 3.5mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.
| Part number | HYG037N03LQ1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 0.98 MB |
| Description | N-Channel MOSFET |
| Datasheet | HYG037N03LQ1D-HOOYI.pdf |
|
|
|
GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G037N03 XYMXXXXXX U G037N03 XYMXXXXXX V G037N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully pliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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