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HYG037N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/85A RDS(ON)= 3.5mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS TO-252-2L
GDS
GDS
TO-251-3L
TO-251-3S
Applications
Switching Application Power Management for DC/DC Battery Protection
Ordering and Marking Information
N-Channel MOSFET
D
G037N03
XYMXXXXXX
U
G037N03
XYMXXXXXX
V
G037N03
XYMXXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
HYG037N03LQ1D Datasheet
