Datasheet Details
| Part number | HYG046N04LQ1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 469.52 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 HYG046N04LQ1D Datasheet
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| Part number | HYG046N04LQ1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 469.52 KB |
| Description | N-Channel MOSFET |
| Datasheet |
HYG046N04LQ1D Datasheet
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GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G046N04L XXXYWXXXXX U G046N04L XXXYWXXXXX V G046N04L XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature 40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.
| Part Number | Description |
|---|---|
| HYG046N04LQ1C2 | Single N-Channel Enhancement Mode MOSFET |
| HYG046N04LQ1U | N-Channel MOSFET |
| HYG046N04LQ1V | N-Channel MOSFET |
| HYG042N10NS1B | N-Channel Enhancement Mode MOSFET |
| HYG042N10NS1P | N-Channel Enhancement Mode MOSFET |
| HYG045N03LA1C1 | N-Channel Enhancement Mode MOSFET |
| HYG045N03LA1C2 | N-Channel Enhancement Mode MOSFET |
| HYG045N03LA1D | N-Channel Enhancement Mode MOSFET |
| HYG045N04LA1D | N-Channel Enhancement Mode MOSFET |
| HYG045N10NS1B | N-Channel Enhancement Mode MOSFET |