Datasheet Details
| Part number | HYG800P10LR1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.44 MB |
| Description | P-Channel MOSFET |
| Datasheet |
|
|
|
|
| Part number | HYG800P10LR1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.44 MB |
| Description | P-Channel MOSFET |
| Datasheet |
|
|
|
|
TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter.
Load switching.
Ordering and Marking Information D G800P10 XYMXXXXXX U G800P10 XYMXXXXXX V G800P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.
| Part Number | Description |
|---|---|
| HYG800P10LR1S | P-Channel Enhancement Mode MOSFET |
| HYG800P10LR1U | P-Channel MOSFET |
| HYG800P10LR1V | P-Channel MOSFET |
| HYG006N04LS1B6 | Single N-Channel Enhancement Mode MOSFET |
| HYG006N04LS1TA | N-Channel Enhancement Mode MOSFET |
| HYG007N03LS1C2 | Single N-Channel Enhancement Mode MOSFET |
| HYG009N04LS1C2 | Single N-Channel Enhancement Mode MOSFET |
| HYG010N06NS1TA | N-Channel Enhancement Mode MOSFET |
| HYG011N04LS1C2 | Single N-Channel Enhancement Mode MOSFET |
| HYG011N04LS1TA | N-Channel Enhancement Mode MOSFET |