H40N03E, H40N03E_Hi - N-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	H40N03E, H40N03E_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	87.49 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	H40N03E_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H40N03E, H40N03E_Hi. Please refer to the document for exact specifications by model.

RDS(on)=16mΩ@VGS=10V, ID=20A.
RDS(on)=25mΩ@VGS=4.5V, ID=20A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

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Published: Oct 17, 2009 |