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H40N03E - N-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H40N03E, a member of the H40N03E_Hi N-Channel Enhancement-Mode MOSFET family.

Features

  • RDS(on)=16mΩ@VGS=10V, ID=20A.
  • RDS(on)=25mΩ@VGS=4.5V, ID=20A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

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Datasheet preview – H40N03E

Datasheet Details

Part number H40N03E
Manufacturer Hi-Sincerity Mocroelectronics
File Size 87.49 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H40N03E Datasheet
Additional preview pages of the H40N03E datasheet.

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    Full PDF Text Transcription

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    HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H40N03E N-Channel Enhancement-Mode MOSFET (25V, 40A) H40N03E Pin Assignment Tab Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.
    Published: |