H40N03E, H40N03E_Hi Datasheet - Hi-Sincerity Mocroelectronics

H40N03E N-Channel Enhancement-Mode MOSFET

H40N03E Features

* RDS(on)=16mΩ@VGS=10V, ID=20A

* RDS(on)=25mΩ@VGS=4.5V, ID=20A

* Advanced trench process technology

* High Density Cell Design for Ultra Low On-Resistance

* Specially Designed for DC/DC Converters and Motor Drivers

* Fully Characterized Avalanche Volta

Datasheet Details

H40N03E, H40N03E_Hi

Hi-Sincerity Mocroelectronics

87.49 KB

N-channel enhancement-mode mosfet.

This datasheet PDF includes multiple part numbers: H40N03E, H40N03E_Hi.
Please refer to the document for exact specifications by model.

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