H40N03E Features
* RDS(on)=16mΩ@VGS=10V, ID=20A
* RDS(on)=25mΩ@VGS=4.5V, ID=20A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Characterized Avalanche Volta
H40N03E_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H40N03E, H40N03E_Hi
Hi-Sincerity Mocroelectronics
87.49 KB
N-channel enhancement-mode mosfet.
This datasheet PDF includes multiple part numbers: H40N03E, H40N03E_Hi.
Please refer to the document for exact specifications by model.
H40N03E Distributor
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