Part number:
BB102M
Manufacturer:
Hitachi
File Size:
64.54 KB
Description:
Build in biasing circuit mos fet ic uhf rf amplifier.
* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
* Provide mini mold packages;
BB102M
Hitachi
64.54 KB
Build in biasing circuit mos fet ic uhf rf amplifier.
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