Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features
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- Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A)
Outline
TO- 220FM w w
.D w
G t a
S a e h t e
U 4
.c m o
1 2
1. Gate 2. Drain 3. Source
3 w w w
.D a
S a t e e h
U 4 t m o...