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H5N5001FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features
• • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A)
Outline
TO–220FM
w
w
.D w
G
t a
D S
S a
e h
t e
U 4
.c
m o
1 2
1. Gate 2. Drain 3. Source
3
w
w
w
.D
a
S a t
e e h
U 4 t
m o .
H5N5001FM Datasheet
