H5N5004PL
H5N5004PL is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- -
- -
- -
Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 n C typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ
Outline
TO-3PL w w
.D w
G t a
S a
1 2 e h
3 t e
U 4
.c m o
1. Gate 2. Drain (Flange) 3. Source w w w
.D a
S a t e e h
U 4 t m o .c
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Tch 150°C Symbol VDSS VGSS ID ID
Note1 (pulse)
Ratings 500 ±30 50 200 50
Unit V V A A A A A W °C/W °C °C
I DR I DR
Note1 (pulse)
200 15 250 0.5 150
- 55 to +150
I AP Note3 Pch
Note2
θ ch-c Tch Tstg
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500
- - 2.0
- 27
- -
- -
- -
- -
- -...
