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H5N5004PL Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar.

H5N5004PL datasheet preview

Datasheet Details

Part number	H5N5004PL
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	52.13 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N5004PL_Hitachi.pdf

Key Features

Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline TO-3PL w w . D w G t a D S S a 1 2 e h 3 t e U 4 . c m o 1. Gate 2. Drain (Flange) 3. Source w w w . D a.

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