Datasheet4U Logo Datasheet4U.com

H5N5001FM Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar.

Key Features

  • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A) Outline TO.
  • 220FM w w . D w G t a D S S a e h t e U 4 . c m o 1 2 1. Gate 2. Drain 3. Source 3 w w w . D a S a t e e h U 4 t m o . c H5N5001FM Absolute Maximu.

H5N5001FM Distributor