Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features
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Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ
Outline
TO-3PL w w
.D w
G t a
S a
1 2 e h
3 t e
U 4
.c m o
1. Gate 2. Drain (Flange) 3. Source w w w
.D a
S a t e e h
U 4 t m o...