The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
H5N5004PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features
• • • • • •
Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ
Outline
TO-3PL
w
w
.D w
G
t a
D S
S a
1 2
e h
3
t e
U 4
.c
m o
1. Gate 2. Drain (Flange) 3. Source
w
w
w
.D
a
S a t
e e h
U 4 t
m o .
H5N5004PL Datasheet
