MBN1200D25B igbt equivalent, silicon n-channel igbt.
* High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low .
of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failur.
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