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2SK1622L - Silicon N-Channel MOS FET

This page provides the datasheet information for the 2SK1622L, a member of the 2SK1622 Silicon N-Channel MOS FET family.

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode rever.

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Datasheet Details

Part number 2SK1622L
Manufacturer Hitachi Semiconductor
File Size 27.27 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet 2SK1622L Datasheet
Additional preview pages of the 2SK1622L datasheet.

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Full PDF Text Transcription

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2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1% 2.
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