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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK1807 Datasheet

Silicon N-Channel MOS FET

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2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK1807 Datasheet

Silicon N-Channel MOS FET

No Preview Available !

2SK1807
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
900
±30
4
10
4
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number 2SK1807
Description Silicon N-Channel MOS FET
Maker Hitachi Semiconductor
Total Page 6 Pages
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