Datasheet4U Logo Datasheet4U.com

2SK2925 - Silicon N-Channel MOSFET

Features

  • Low on-resistance R DS =0.060 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline DPAK.
  • 2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tempe.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2925 Silicon N-Channel MOSFET Renesas
2SK2925L Silicon N-Channel MOSFET Renesas
2SK2925S N-Channel Silicon MOSFET Guangdong Kexin Industrial
2SK2925S Silicon N-Channel MOSFET Renesas
2SK2920 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2925L Silicon N-Channel MOSFET
2SK2925S Silicon N-Channel MOSFET
2SK2922 Silicon N Channel MOS FET
2SK2926 Silicon N Channel MOS FET
2SK2926L Silicon N Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
Published: |