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4AM13 Datasheet - Hitachi Semiconductor

Silicon N-Channel/P-Channel Power MOS FET Array

4AM13 Features

* Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS =

* 10 V, ID =

* 1.5 A

* Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H

4AM13 Datasheet (144.85 KB)

Preview of 4AM13 PDF

Datasheet Details

Part number:

4AM13

Manufacturer:

Hitachi Semiconductor

File Size:

144.85 KB

Description:

Silicon n-channel/p-channel power mos fet array.

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4AM13 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

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