4AM15 Key Features
- Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS = -10 V, ID = -2 A
- Low drive current High speed switching High density mounting Suitable for H-bridged motor driver
- Part: 4AM15
- Manufacturer: Hitachi Semiconductor
- Size: 83.26 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array |
4AM15 Description
4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.