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4AM16 Datasheet - Hitachi Semiconductor

Silicon N-Channel/P-Channel Power MOS FET Array

4AM16 Features

* Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =

* 10 V, I D =

* 4 A

* High speed switching

* High density mounting

* Suitable for H-brided motor driver Outline www.DataSheet.in 4AM16 Absolute Ma

4AM16 Datasheet (113.12 KB)

Preview of 4AM16 PDF

Datasheet Details

Part number:

4AM16

Manufacturer:

Hitachi Semiconductor

File Size:

113.12 KB

Description:

Silicon n-channel/p-channel power mos fet array.

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4AM16 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

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