4AM16 Datasheet Silicon N-Channel/P-Channel Power MOS FET Array

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power.

4AM16 silicon n-channel/p-channel power mos fet array by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	4AM16
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	113.12 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Download	4AM16 Download (PDF)

Key Features

Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =.
10 V, I D =.
4 A.
High speed switching.
High density mounting.
Suitable for H-brided motor driver Outline www. DataSheet. in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID.

4AM16 Distributor & Price

Compare 4AM16 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
4AM11	Silicon N-Channel/P-Channel Power MOS FET Array
4AM13	Silicon N-Channel/P-Channel Power MOS FET Array
4AM15	Silicon N-Channel/P-Channel Power MOS FET Array
4AM17	Silicon N/P-Channel/P-Channel Power MOS FET Array