4AM16 Key Features
- Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = -10 V, I D = -4 A
- High speed switching
- High density mounting
- Suitable for H-brided motor driver
- Part: 4AM16
- Manufacturer: Hitachi Semiconductor
- Size: 113.12 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array |
4AM16 Description
4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.