4AM17 Key Features
- Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = -10 V, ID = -4 A
- 4 V gate drive devices
- High density mounting
- Part: 4AM17
- Manufacturer: Hitachi Semiconductor
- Size: 62.53 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array |
4AM17 Description
4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st.