Part number:
4AM17
Manufacturer:
Hitachi Semiconductor
File Size:
62.53 KB
Description:
Silicon n/p-channel/p-channel power mos fet array.
* Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS =
* 10 V, ID =
* 4 A
* 4 V gate drive devices.
* High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S 3 S 6
4AM17
Hitachi Semiconductor
62.53 KB
Silicon n/p-channel/p-channel power mos fet array.
📁 Related Datasheet
4AM11 Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
4AM15 Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
4AM16 Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
4A1 Plastic Silicon Rectifiers (Luguang Electronic)
4A10 Plastic Silicon Rectifiers (Luguang Electronic)
4A12P-1AH-12R5 Surge Line Protection Module (Bourns Electronic)
4A12P-506-500 Surge Line Protection Module (Bourns Electronic)
4A12P-516-500 Surge Line Protection Module (Bourns Electronic)
4AC12 Silicon NPN Epitaxial (Hitachi Semiconductor)
