datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT2042T Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT2042T pdf
HAT2042T
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
ADE-208-669F (Z)
7th. Edition
February 1999
TSSOP–8
1
D
87 6 5
8 123 4
D
45
GG
SS
23
MOS1
SS
67
MOS2
1, 8 Drain
2, 3, 6, 7 Source
4, 5 Gate


Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT2042T Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT2042T pdf
HAT2042T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
28
± 12
5.0
40
5.0
1.0
V
V
A
A
A
W
Channel dissipation
Pch Note3
1.5
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW 10 µs, duty cycle 1%
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
28
0.4
7
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
0.027
0.037
11
510
190
140
8.5
4.5
4
14
120
85
120
0.85
40
Max
± 0.1
1
1.4
0.034
0.044
1.1
Unit
V
µA
µA
V
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
VGS = ± 12 V, VDS = 0
VDS = 28 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 3 A, VGS = 4 V Note4
ID = 3 A, VGS = 2.5 V Note4
ID = 3 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4 V
ID = 5 A
VGS = 4 V, ID = 3 A
VDD 10 V
IF = 5.0 A, VGS = 0 Note4
IF = 5.0 A, VGS = 0
diF/ dt = 20 A/ µs
2


Part Number HAT2042T
Description Silicon N Channel Power MOS FET High Speed Power Switching
Maker Hitachi Semiconductor
Total Page 9 Pages
PDF Download
HAT2042T pdf
HAT2042T Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 HAT2042 Silicon N Channel Power MOS FET High Speed Power Switching Hitachi Semiconductor
Hitachi Semiconductor
HAT2042 pdf
2 HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching Hitachi Semiconductor
Hitachi Semiconductor
HAT2042T pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy