PF01411A Datasheet Mos Fet Power Amplifier Module For E-gsm Handy Phone

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C (Z) 4th Edition February 1997 Application • For E-GSM class4 880 to 915 MHz • For 4.

Datasheet Details

Part number	PF01411A
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	25.87 KB
Description	MOS FET Power Amplifier Module for E-GSM Handy Phone
Datasheet	PF01411A_HitachiSemiconductor.pdf

Key Features

High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement.
RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10.

PF01411A Distributor & Price

Compare PF01411A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
PF01411B	MOS FET Power Amplifier Module for E-GSM Handy Phone
PF01410A	MOS FET Power Amplifier Module for GSM Handy Phone
PF01412A	MOS FET Power Amplifier Module for E-GSM Handy Phone
PF0121	MOS FET Power Amplifier Module for GSM Mobile Phone
PF00105A	MOS FET Power Amplifier Module for AMPS Handy Phone
PF0030	MOS FET Power Amplifier
PF0032	MOS FET Power Amplifier
PF0210	MOS FET Power Amplifier Module for ADC Mobile Phone
PF0310	MOS FET Power Amplifier
PF0310A	MOS FET Power Amplifier