Datasheet Summary
Military & Space Products
128K x 8 STATIC RAM- SOI
Features
RADIATION
- Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Process (Leff = 0.55 µm)
- Total Dose Hardness through 1x106 rad(SiO2)
..
OTHER
- Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C)
- Typical Operating Power <25 mW/MHz
- Asynchronous Operation
- CMOS or TTL patible I/O
- Single 5 V ± 10% Power Supply
- Packaging Options
- 32-Lead Flat Pack (0.820 in. x 0.600 in.)
- 40-Lead Flat Pack (0.775 in. x 0.710 in.)
- Neutron Hardness through 1x10 cm
-2
- Dynamic and Static Transient Upset Hardness through 1x1011 rad (Si)/s
- Dose Rate Survivability through <1x1012...