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Honeywell International Electronic Components Datasheet

HX6228 Datasheet

128K x 8 STATIC RAM-SOI HX6228

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Military & Space Products
128K x 8 STATIC RAM—SOI
HX6228
FEATURES
RADIATION
OTHER
• Fabricated with RICMOS™ IV Silicon on Insulator (SOI)
0.7 µm Process
(L
eff
=
0.55
µm)
• Total Dose Hardness through 1x106 rad(SiO2)
www.DataSheet4NUe.cuotmron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness
through 1x1011 rad (Si)/s
• Read/Write Cycle Times
16 ns (Typical)
25 ns (-55 to 125°C)
• Typical Operating Power <25 mW/MHz
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Dose Rate Survivability through <1x1012 rad(Si)/s
• Single 5 V ± 10% Power Supply
• Soft Error Rate of <1x10-10 upsets/bit-day in
Geosynchronous Orbit
• No Latchup
• Packaging Options
- 32-Lead Flat Pack (0.820 in. x 0.600 in.)
- 40-Lead Flat Pack (0.775 in. x 0.710 in.)
GENERAL DESCRIPTION
The 128K x 8 Radiation Hardened Static RAM is a high
performance 131,072 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in radiation environ-
ments. The RAM operates over the full military temperature
range and requires only a single 5 V ± 10% power supply. The
RAM is wire bond programmable for either TTL or CMOS
compatible I/O. Power consumption is typically less than 25
mW/MHz in operation, and less than 5 mW in the low power
disabled mode. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 15 ns at 5V.
Honeywell’s enhancedSOI RICMOS™IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and process
hardening techniques. The RICMOS™ IV process is an
advanced 5-volt, SIMOX CMOS technology with a 150 Å
gate oxide and a minimum feature size of 0.7 µm (0.55 µm
effective gate length—Leff). Additional features include
Honeywell’s proprietary SHARP planarization process, and
a lightly doped drain (LDD) structure for improved short
channel reliability. A 7 transistor (7T) memory cell is used for
superior single event upset hardening, while three layer
metal power bussing and the low collection volume SIMOX
substrate provide improved dose rate hardening.


Honeywell International Electronic Components Datasheet

HX6228 Datasheet

128K x 8 STATIC RAM-SOI HX6228

No Preview Available !

HX6228
FUNCTIONAL DIAGRAM
A:3-7,12,14-16
CE
NCS
9
NWE
www.DataSheet4U.coNmOE
A:0-2, 8-11, 13
8
Row
Decoder
131,072 x 8
Memory
Array
•••
Column Decoder
Data Input/Output
WE • CS • CE
8
8
DQ:0-7
NWE • CS • CE • OE
(0 = high Z)
1 = enabled
Signal
#
Signal
All controls must be
enabled for a signal to
pass. (#: number of
buffers, default = 1)
SIGNAL DEFINITIONS
A: 0-16
DQ: 0-7
NCS
NWE
NOE
CE
Address input pins which select a particular eight-bit word within the memory array.
Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write
operation.
Not chip select, when at a low level allows normal operation. When at a high level NCS forces the SRAM to
a precharge condition, holds the data output drivers in a high impedance state and disables all the input
buffers except CE. If this signal is not used it must be connected to VSS.
Negative write enable, when at a low level activates a write operation and holds the data output drivers in
a high impedance state. When at a high level NWE allows normal read operation.
Negative output enable, when at a high level holds the data output drivers in a high impedance state. When
at a low level, the data output driver state is defined by NCS, NWE and CE. If this signal is not used it must
be connected to VSS.
Chip enable, when at a high level allows normal operation. When at a low level CE forces the SRAM to a
precharge condition, holds the data output drivers in a high impedance state and disables all the input buffers
except the NCS input buffer. If this signal is not used it must be connected to VDD.
TRUTH TABLE
CE
NCS
NWE NOE
MODE
DQ
H L H L Read Data Out
H
L
LX
Write
Data In
X H XX XX Deselected High Z
L X XX XX Disabled High Z
Notes:
X: VI=VIH or VIL
XX: VSSVIVDD
NOE=H: High Z output state maintained
for NCS=X, CE=X, NWE=X
2


Part Number HX6228
Description 128K x 8 STATIC RAM-SOI HX6228
Maker Honeywell
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