CS1N60A3H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number: CS1N60A3H
Manufacturer: Huajing Microelectronics
File Size: 532.36 KB
Datasheet: CS1N60A3H-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

CS1N60A3H Product details

Description

VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test.

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