CS1N60A3H
CS1N60A3H is Silicon N-Channel Power MOSFET manufactured by Huajing Microelectronics.
Description
：
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching
RDS(ON)Typ
11 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4n C) l Low Reverse transfer capacitances(Typical:2.6p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =...
