l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche e.

Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDS.

CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power swit.

CS25N06B3

CS25N06B8

CS25N06C3

CS25N06C4

CS25N10A4

CS25N50A8R

CS25N50AKR

CS25N50AKRZ-G

CS25N50ANR

CS25N50FA9R

CS250

CS2500

CS2501