CS25N06B4
CS25N06B4 is Silicon N-Channel Power MOSFET manufactured by Huajing Microelectronics.
Description
：
CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13n C) l Low Reverse transfer capacitances(Typical:87p F) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
60 V 25 A 50 W 28 mΩ
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS dv/dt a2
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current...
