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CS3N90A8 - Silicon N-Channel Power MOSFET

General Description

the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3N90A8
Manufacturer Huajing Microelectronics
File Size 495.90 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N90A8 Datasheet

Full PDF Text Transcription for CS3N90A8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3N90A8. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS3N90 A8 ○R General Description： CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology wh...

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hanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 900 3 80 5.0 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class

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