Datasheet4U Logo Datasheet4U.com

HY64UD16162M Datasheet - Hynix Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

HY64UD16162M 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

- Power Up & Deep Power Down Exit Sequence Mar. 11. ‘ 02 Final Feb. 27. ‘ 02 Preliminary Dec. 20. ‘ 01 Preliminary Nov. 14. ’ 01 Preliminary Oct. 07. ‘ 01 Preliminary Jul.18. ’ 01 Preliminary Draft Date Jan. 04. ’ 01 Jul. 03. ’ 01 Remark Preliminary Preliminary This document is a general product .

HY64UD16162M_HynixSemiconductor.pdf

Preview of HY64UD16162M PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number:

HY64UD16162M

Manufacturer:

Hynix Semiconductor

File Size:

283.59 KB

Description:

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16162M Features

* CMOS Process Technology

* 1M x 16 bit Organization

* TTL compatible and Tri-state outputs

* Deep Power Down : Memory cell data hold invalid

* Standard pin configuration : 48-FBGA

* Data mask function by /LB, /UB PRODUCT FAMILY Product No. HY64UD1616

HY64UD16162M Distributors

📁 Related Datasheet

HY601680 HY604814 HY6116 HY6116A HY6210 HY62256A

📌 All Tags

HY64UD16162M bit Low Low Power Pseudo SRAM Hynix Semiconductor
Hynix Semiconductor HY64UD16162M-like datasheet
HY64UD16162B
HY64UD16322A
HY64UD16322M
HY64LD16162M
HY64SD16162B