HY64UD16322M Datasheet - Hynix Semiconductor

HY64UD16322M 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

- Power Up & Deep Power Down Exit Sequence Mar. 11. ‘ 02 Final Feb. 27. ‘ 02 Preliminary Dec. 20. ‘ 01 Preliminary Nov. 07. ’ 01 Preliminary Oct. 06. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Draft Date Jan. 04. ’ 01 Jul. 03. ’ 01 Remark Preliminary Preliminary This document is a general product.

www.DataSheet4U.com HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History 1.0 1.1 Initial Revised - Change Pin Connection - Improve tOE from 45ns to 30ns - Correct State Diagram 1.2 Revised - Correct Package Dimension - Change Absolute Maximum Ratings 1.3 Revised - DC Electrical Characteristics (ISB1,IDPD,ICC1) - State Diagram - Power Up Sequence - Deep Power Down Sequence - Read/Write Cycle Note - Release standby current from 100.

HY64UD16322M Features

* CMOS Process Technology

* 2M x 16 bit Organization

* TTL compatible and Tri-state outputs

* Deep Power Down : Memory cell data hold invalid

* Standard pin configuration : 48-FBGA

* Data mask function by /LB, /UB PRODUCT FAMILY Product No. HY64UD1632

HY64UD16322M_HynixSemiconductor.pdf