HY64UD16322M 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

Hynix Semiconductor

Description

www.DataSheet4U.com HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No.History 1.0 1.1 In.
- Power Up & Deep Power Down Exit Sequence Mar.

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Datasheet Specifications

Part number: HY64UD16322M
Manufacturer: Hynix Semiconductor
File Size: 283.27 KB
Datasheet: HY64UD16322M_HynixSemiconductor.pdf
Description: 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

Features

* CMOS Process Technology
* 2M x 16 bit Organization
* TTL compatible and Tri-state outputs
* Deep Power Down : Memory cell data hold invalid
* Standard pin configuration : 48-FBGA
* Data mask function by /LB, /UB PRODUCT FAMILY Product No. HY64UD1632

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HY64UD16322M bit Low Low Power Pseudo SRAM Hynix Semiconductor

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